RU2H50R Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤43mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot

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RU2H50R N-Channel Advanced Power MOSFET MOSFET Features • 200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V • Low Gate Charge • Fast Switching • 100% avalanc

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