
RU6H2K - N-Channel Advanced Power MOSFET
RU6H2K
N-Channel Advanced Power MOSFET
Features
• 600V/2A,
RDS (ON) =4000mΩ(Typ.)@VGS=10V
• Gate charge minimized • Low Crss( Typ. 5pF) • Extremely h
Rating:
1
★
(2 votes)