RU6H2K N-Channel Advanced Power MOSFET

Ruichips

Description

RU6H2K N-Channel Advanced Power MOSFET .
GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-So.

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Datasheet Specifications

Part number: RU6H2K
Manufacturer: Ruichips
File Size: 271.21 KB
Datasheet: RU6H2K-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

Features

* 600V/2A, RDS (ON) =4000mΩ(Typ. )@VGS=10V
* Gate charge minimized
* Low Crss( Typ. 5pF)
* Extremely high dv/dt capability
* 100% avalanche tested

Applications

* High efficiency switch mode power supplies

RU6H2K Distributors

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RU6H2K N-Channel Advanced Power MOSFET Ruichips

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