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RU6H2K N-Channel Advanced Power MOSFET

RU6H2K Description

RU6H2K N-Channel Advanced Power MOSFET .
GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-So.

RU6H2K Features

* 600V/2A, RDS (ON) =4000mΩ(Typ. )@VGS=10V
* Gate charge minimized
* Low Crss( Typ. 5pF)
* Extremely high dv/dt capability
* 100% avalanche tested

RU6H2K Applications

* High efficiency switch mode power supplies

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Datasheet Details

Part number
RU6H2K
Manufacturer
Ruichips
File Size
271.21 KB
Datasheet
RU6H2K-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips
Ruichips RU6H2K-like datasheet