RU6H2K

N-Channel Advanced Power MOSFET

Ruichips

RU6H2K Features

* 600V/2A, RDS (ON) =4000mΩ(Typ.)@VGS=10V

* Gate charge minimized

* Low Crss( Typ. 5pF)

* Extremely high dv/dt capability

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* High efficiency switch mod

RU6H2K General Description

GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP.

RU6H2K Datasheet (271.21 KB)

RU6H2K Datasheet Preview — Preview of RU6H2K PDF

Datasheet Details

Part number:

RU6H2K

Manufacturer:

Ruichips

File Size:

271.21 KB

Description:

N-channel advanced power mosfet.

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RU6H2K N-Channel Advanced Power MOSFET Ruichips

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RU6H2K Features

RU6H2K General Description

Datasheet Details

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