RU6H2K Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU6H2K, N-Channel Advanced Power MOSFET

GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP

RU6H2K Features

* 600V/2A, RDS (ON) =4000mΩ(Typ.)@VGS=10V

* Gate charge minimized

* Low Crss( Typ. 5pF)

* Extremely high dv/dt capability

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* High efficiency switch mod