Datasheet4U Logo Datasheet4U.com

RU6H11R N-Channel Advanced Power MOSFET

RU6H11R Description

.
TO-220 Applications. High efficiency switch mode power supplies. Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Para.

RU6H11R Features

* 600V/10A, RDS (ON) =0.75Ω (Typ. ) @ VGS=10V
* Gate charge minimized
* Low Crss( Typ. 12pF)
* Extremely high dv/dt capability
* 100% avalanche tested

RU6H11R Applications

* High efficiency switch mode power supplies
* Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature R

📥 Download Datasheet

Preview of RU6H11R PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
RU6H11R
Manufacturer
Ruichips
File Size
282.73 KB
Datasheet
RU6H11R-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

📁 Related Datasheet

  • RU602B - N-Channel 60V MOSFET (VBsemi)
  • RU6055 - Sensors (ifm)
  • RU6199 - N-Channel Advanced Power MOSFET (Ruichips Semiconductor)

📌 All Tags

N-Channel Advanced Power MOSFET Ruichips
Ruichips RU6H11R-like datasheet