RU6199
Ruichips Semiconductor
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N-channel advanced power mosfet.
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RU6199Q - N-Channel Advanced Power MOSFET
(Ruichips)
RU6199Q
N-Channel Advanced Power MOSFET
Features
· 60V/200A
RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V
·Avalanche Rated · Reliable and Rugged · Lead Free and Gr.
RU6199R - N-Channel Advanced Power MOSFET
(Ruichips)
RU6199R
N-Channel Advanced Power MOSFET
Features
· 60V/200A
RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V
·Avalanche Rated · Reliable and Rugged · Lead Free and Gr.
RU60100R - N-Channel Advanced Power MOSFET
(Ruichips)
RU60100R
N-Channel Advanced Power MOSFET
Features
• 60V/130A, RDS (ON) =4mΩ (Typ.) @VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
.
RU60101R - N-Channel Advanced Power MOSFET
(Ruichips)
RU60101R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/100A, RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resist.
RU60120R - N-Channel Advanced Power MOSFET
(Ruichips)
RU60120R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/125A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resi.
RU60190R - N-Channel Advanced Power MOSFET
(Ruichips)
RU60190R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/190A, RDS (ON) =3.7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resi.
RU60200R - N-Channel Advanced Power MOSFET
(Ruichips)
RU60200R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/230A, RDS (ON) =2.5mΩ (Typ.) VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt cap.
RU60280R - N-Channel Advanced Power MOSFET
(Ruichips)
RU60280R
N-Channel Advanced Power MOSFET
Features
• 60V/280A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V
• Reliable and Rugged • Ultra Low On-Resistance • 100% av.
RU602B - N-Channel Advanced Power MOSFET
(Ruichips)
RU602B
N-Channel Advanced Power MOSFET
Features
• 60V/1.5A,
RDS (ON) =220mΩ(Typ.)@VGS=10V
• Low RDS (ON) • Super High Dense Cell Design • Reliable an.
RU60450Q - N-Channel Advanced Power MOSFET
(Ruichips)
RU60450Q
N-Channel Advanced Power MOSFET
Features
• 60V/450A,
RDS (ON) =1.3mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance • Super High Dense Cell Design .