RU60101R Datasheet - Ruichips

RU60101R - N-Channel Advanced Power MOSFET

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Lar

RU60101R Features

* 60V/100A, RDS (ON) =7mΩ(Typ.)@VGS=10V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* Low Gate Charge

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Switching Application Systems

RU60101R-Ruichips.pdf