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RU60101R Datasheet - Ruichips

N-Channel Advanced Power MOSFET

RU60101R Features

* 60V/100A, RDS (ON) =7mΩ(Typ.)@VGS=10V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* Low Gate Charge

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Switching Application Systems

RU60101R General Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Lar.

RU60101R Datasheet (297.49 KB)

Preview of RU60101R PDF

Datasheet Details

Part number:

RU60101R

Manufacturer:

Ruichips

File Size:

297.49 KB

Description:

N-channel advanced power mosfet.

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RU60101R N-Channel Advanced Power MOSFET Ruichips

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