Rectron Datasheet | Specifications & PDF Download

RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

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NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

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NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

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GLASSPASSIVATED J UNCTIONPLASTICRECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere 1N4001G THRU 1N4007G FEATURES * High reliability * Low c

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PN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 625mW(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-ba

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NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

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RM80N30LD N-Channel Enhancement Mode Power MOSFET Description The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) w

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Ampere

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5.0SMCJ SERIES 6XUIDFH0RXQW7UDQVLHQW9ROWDJH6XSSUHVVRU5HFWLILHUV Reverse Voltage 11 ~ 440 V 5000 Watt Peak Pulse Power FEATURES * Excellent c

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5.0SMCJ SERIES 6XUIDFH0RXQW7UDQVLHQW9ROWDJH6XSSUHVVRU5HFWLILHUV Reverse Voltage 11 ~ 440 V 5000 Watt Peak Pulse Power FEATURES * Excellent c

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5.0SMCJ SERIES 6XUIDFH0RXQW7UDQVLHQW9ROWDJH6XSSUHVVRU5HFWLILHUV Reverse Voltage 11 ~ 440 V 5000 Watt Peak Pulse Power FEATURES * Excellent c

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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 FEATURES * For general AF applications * High collector current * High curren

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5.0SMCJ SERIES 6XUIDFH0RXQW7UDQVLHQW9ROWDJH6XSSUHVVRU5HFWLILHUV Reverse Voltage 11 ~ 440 V 5000 Watt Peak Pulse Power FEATURES * Excellent c

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION W005L THRU W10L SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts

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5.0SMCJ SERIES 6XUIDFH0RXQW7UDQVLHQW9ROWDJH6XSSUHVVRU5HFWLILHUV Reverse Voltage 11 ~ 440 V 5000 Watt Peak Pulse Power FEATURES * Excellent c

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5.0SMCJ SERIES 6XUIDFH0RXQW7UDQVLHQW9ROWDJH6XSSUHVVRU5HFWLILHUV Reverse Voltage 11 ~ 440 V 5000 Watt Peak Pulse Power FEATURES * Excellent c

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GLASS PASSIVATED BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes KBP2005 THRU KBP210 FEATURES * Ideal for printed circuit board

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION W005L THRU W10L SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Ampere

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