Renesas Technology Datasheet | Specifications & PDF Download

BCR08AM-14A 700V - 0.8A - Triac Low Power Use Features • IT (RMS): 0.8 A • VDRM: 700 V • IRGTI, IRGTI, IRGT III: 5 mA • Tj: 125 °C Data Sheet R07DS12

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th

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BCR8PM-14L Triac Medium Power Use REJ03G0308-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 8 A • VDRM : 700 V www.DataSheet4U.com • IFGTI, IRGTI, I

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2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Featu

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April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat

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Preliminary Datasheet BCR12LM-14LB Triac Medium Power Use Features     IT (RMS) : 12 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGTIII : 30 mA Vi

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To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Co

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