.
Renesas Technology
BCR08AM-14A - Triac
BCR08AM-14A 700V - 0.8A - Triac Low Power Use Features • IT (RMS): 0.8 A • VDRM: 700 V • IRGTI, IRGTI, IRGT III: 5 mA • Tj: 125 °C Data Sheet R07DS12.
Renesas Technology
BCR12LM-14LB - Triac
Preliminary Datasheet BCR12LM-14LB Triac Medium Power Use Features IT (RMS) : 12 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGTIII : 30 mA Vi.
Renesas Technology
K1058 - Silicon N-Channel MOSFET
2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Featu.
Renesas Technology
RJK0393DPA - N-Channel Power MOSFET
RJK0393DPA 30V, 40A, 4.3m max. N Channel Power MOS FET High Speed Power Switching Features High speed switching Capable of 4.5V gate drive Low .
Renesas Technology
RJK5020DPK - Silicon N Channel MOS FET High Speed Power Switching
www.DataSheet4U.com RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1263-0200 Rev.2.00 Dec 19, 2006 Features • Low on-resistan.
Renesas Technology
64F7055 - HD64F7055
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.
Renesas Technology
BCR8PM-14L - Triac
BCR8PM-14L Triac Medium Power Use REJ03G0308-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 8 A • VDRM : 700 V www.DataSheet4U.com • IFGTI, IRGTI, I.
Renesas Technology
K3446 - 2SK3446
2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features • Capable of 2.5 V g.
Renesas Technology
RNA51957B - Voltage Detecting a System Resetting IC Series
www.DataSheet4U.com RNA51957A,B Voltage Detecting, System Resetting IC Series REJ03D0912-0100 Rev.1.00 Oct 10, 2008 Description RNA51957A,B are semi.
Renesas Technology
BCR8LM-14LB - Triac
BCR8LM-14LB Triac Medium Power Use Features IT (RMS) : 8 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGTIII : 30 mA Viso : 1800 V Outline RENES.
Renesas Technology
HA1374 - Dual 2 to 3W Audio Power Amplifiers
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Renesas Technology
HA12019 - HA12019
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Renesas Technology
RJP3065DPP - IGBT
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.
Renesas Technology
PCA4738F-80A - User Manual
User’s Manual PCA4738F-42A PCA4738F-100A PCA4738S-42A PCA4738F-80A PCA4738G-100A PCA4738S-64A PCA4738F-64A PCA4738H-80A User’s Manual Supported De.
Renesas Technology
HZU18L - Silicon Epitaxial Planar Zener Diode
HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features • Diode noise level of this.
Renesas Technology
BCR2PM-12 - Triac
BCR2PM-12 Triac Low Power Use REJ03G0300-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 2 A • VDRM : 600 V www.DataSheet4U.com • IRGTI, IRGTⅢ : 10 m.
Renesas Technology
BCR1AM-12A - Triac
BCR1AM-12A Triac Low Power Use REJ03G1248-0200 Rev.2.00 Nov 30, 2007 Features • IT (RMS) : 1 A • VDRM : 600 V www.DataSheet4U.com • IFGTI , IRGTI, IR.
Renesas Technology
RNA51953B - Voltage Detecting a System Resetting IC Series
www.DataSheet4U.com RNA51953A,B Voltage Detecting, System Resetting IC Series REJ03D0911-0100 Rev.1.00 Oct 10, 2008 Description RNA51953A,B are semi.
Renesas Technology
RJP3053DPP - IGBT
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.
