S-5716 Series www.ablic.com © ABLIC Inc., 2011-2.
K4R571669D - 256/288Mbit RDRAM(D-die)
K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..IRHMS57160 - RADIATION HARDENED POWER MOSFET
PD-95889D IRHMS57160 RADIATION HARDENED JANSR2N7471T1 POWER MOSFET 100V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF-.RT5716 - IQ Step Down Converter
RT5716 1.8V to 5.5V, 0.6A/1A, 2.3A IQ Step Down Converter 6-Pin, 0.35mm Pitch WCSP Package General Description The RT5716 is a high switching frequ.IRHMS57163SE - RADIATION HARDENED POWER MOSFET
PD-95840A IRHMS57163SE RADIATION HARDENED JANSR2N7475T1 POWER MOSFET 130V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/685 5 .R5F35716KFB - MCU
Datasheet M16C/5M Group, M16C/57 Group RENESAS MCU R01DS0019EJ0110 Rev.1.10 Sep 01, 2011 1. Overview 1.1 Features The M16C/5M and M16C/57 Group’s .TAS5716 - 20-W Stereo Digital-Audio Power Amplifier
TAS5716 www.ti.com .ADRF5716 - 2-bit Silicon Digital Attenuator
Data Sheet ADRF5716 Silicon Digital Attenuator, 2-Bit, 100 MHz to 30 GHz FEATURES ► Ultra-wideband frequency range: 100 MHz to 30 GHz ► Attenuation r.2N5716 - SILICON LOW NOISE N-CHANNEL JUNCTION FET
2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode Junction Field·Effect Transistors designe.B57164K - NTC thermistors
NTC thermistors for temperature measurement Leaded NTC thermistors, lead spacing 5 mm Series/Type: Date: B57164K January 2018 © EPCOS AG 2018. Repr.B57164 - Temperaturmessung Bedrahtete Scheiben
www.DataSheet4U.com Temperaturmessung Bedrahtete Scheiben B57164 K 164 Anwendung q Temperaturkompensation q Temperaturmessung q Temperaturregelung .IRHNA57160 - RADIATION HARDENED POWER MOSFET
www.DataSheet4U.com PD - 91860H RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57160 100K Ra.IRHM57160 - (IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE
.B57164 - Leaded Disks
NTC thermistors for temperature measurement Leaded NTCs, lead spacing 5 mm Series/Type: Date: B57164 March 2006 © EPCOS AG 2006. Reproduction, publ.IRHMJ57160 - (IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
www.DataSheet4U.com PD-96916 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless) Product Summary Part Number Radiation Level IRHMJ57160.LY62L25716 - 256K X 16 BIT LOW POWER CMOS SRAM
® LY62L25716 Rev. 2.4 256K X 16 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 2.0 Rev. 2.1 Rev. 2.2 Rev. 2.3 Description Initial .UPD5716GR - CMOS MMIC 4 x 2 IF SWITCH MATRIX
DATA SHEET CMOS INTEGRATED CIRCUIT µPD5716GR CMOS MMIC 4 x 2 IF SWITCH MATRIX FEATURES • 4 independent IF channels, integral switching to channel i.