S-HF Datasheet | Specifications & PDF Download

www.DataSheet4U.com JQX-13F File No.:E133481 MINIATURE INTERMEDIATE POWER RELAY Features * 15A switching capabilities * 1&2 pole configurations Fil

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NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5

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1 of page 8 Specification of NHE520-HF-6/7 File No：NHS-08905- Specification To: Co., Ltd. Name of products High Sensitivity type Hall Element Model

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HF500-15 Fixed Frequency Multi-Mode Flyback Regulator Integrated with Highly Rugged MOSFET DESCRIPTION The HF500-15 is a fixed-frequency, currentmode

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ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–So

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BB179B UHF variable capacitance diode Rev. 3 — 5 September 2011 Product data sheet 1. Product profile 1.1 General description The BB179B is a varia

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S−AV6 TOSHIBA RF POWER AMPLIFIER MODULE S−AV6 VHF MARINE FM RF POWER AMPLIFIER MODULE Unit: mm l High Gain : Po ≥ 28W, GP ≥ 21.4dB, ηT ≥ 45% MAXIMUM

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FHF8N60NMOS 。AC-DC ，DC-DC，HPMW。 ★ ★ ★ 8A,600V,RDS(on)(）0.8Ω 、 FHF8N60 （TC=25℃） — TC=25℃ TC=25℃ VDSS ID VGS PD TJ Tstg 600 8 ±30 52

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General Purpose Transistor 2SC5658-HF (NPN) RoHS Device Halogen Free Comchip SMD Diode Specialist Features -Low Cob. Mechanical data -Case: SOT-723,

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20200 1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG 1 1.A 2.K 3.A TO-220F is VBR IR=1.0mA TA=25 VF

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Global LCD Panel Exchange Center www.panelook.com PRODUCT SPECIFICATION Doc. Number: ϭʳ Tentative Specification ϮʳPreliminary Specification ϭʳ Appro

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BB 619 Silicon Variable Capacitance Diode q BB 619 For tuning of extended frequency bands in VHF TV/VTR tuners Type BB 619 Ordering Code (tape an

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GD200HFQ120C2S STARPOWER SEMICONDUCTOR GD200HFQ120C2S 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low c

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NV9580 1. Features GaNSense™ Power FET • Loss-less current sensing • Low 170 mΩ power FET • Zero reverse recovery charge • Low output charge • 800 V

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