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BLF177 HF/VHF power MOS transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 .
Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range.

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Features

* High power gain
* Low intermodulation distortion
* Easy power control
* Good thermal stability

Applications

* in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the 'General' section for f

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