* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (HF to 1 GHz). APPLICATIONS
* Communication transmitter applications in the
BLF1046
43.17 KB
Uhf power ldmos transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF1046 UHF power LDMOS transistor
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P.
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