BLF10M6LS135 - Power LDMOS transistor
135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 869 to 894
BLF10M6LS135 Features
* Easy power control
* Integrated ESD protection
* Enhanced ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (700 MHz to 1000 MHz)
* Internally matched for ease of use
* Compliant to Directive 2002/95/EC, regarding restrict
