Description
BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev.2 * 20 June 2013 Product data sheet 1.Product profile 1.1 General .
A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.
Features
* Excellent ruggedness (VSWR 40 : 1 through all phases)
* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
* High power gain
* High efficiency
* Designed for broadband operation (400 MHz to 1000 MHz)
* Internal input matching for high gain and optimum broadband
Applications
* and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information
Test signal
f (MHz)
PL(AV) (W)
PL(M) (W)
Gp D IMD3 (dB) (%) (dBc)
RF performance in a common source 860 MHz narrowband test ci
