BLF10H6600PS, BLF10H6600P Datasheet - NXP

Datasheet Details

Part number:

BLF10H6600PS, BLF10H6600P

Manufacturer:

File Size:

229.95 KB

Description:

Power LDMOS transistor

Note:

This datasheet PDF includes multiple part numbers: BLF10H6600PS, BLF10H6600P.
Please refer to the document for exact specifications by model.

Features

* Excellent ruggedness (VSWR  40 : 1 through all phases)

* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

* High power gain

* High efficiency

* Designed for broadband operation (400 MHz to 1000 MHz)

* Internal input matching for high gain and optimum broadband

BLF10H6600PS, BLF10H6600P, Power LDMOS transistor

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc

BLF10H6600PS Distributor

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