BLF10M6LS200, BLF10M6200 Datasheet - Ampleon

BLF10M6LS200 Power LDMOS transistor

200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier .

BLF10M6LS200 Features

* Easy power control

* Integrated ESD protection

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (700 MHz to 1000 MHz)

* Internally matched for ease of use

* Compliant to Directive 2002/95/EC, regarding restric

BLF10M6200-Ampleon.pdf

BLF10M6LS200 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF10M6LS200, BLF10M6200. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLF10M6LS200, BLF10M6200

Manufacturer:

Ampleon

File Size:

362.87 KB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF10M6LS200, BLF10M6200.
Please refer to the document for exact specifications by model.

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BLF10M6LS200 BLF10M6200 Power LDMOS transistor Ampleon

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