BLF10H6600P Power LDMOS transistor

Ampleon

Description

BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

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Datasheet Specifications

Part number: BLF10H6600P
Manufacturer: Ampleon
File Size: 503.58 KB
Datasheet: BLF10H6600P-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness (VSWR  40 : 1 through all phases)
* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
* High power gain
* High efficiency
* Designed for broadband operation (400 MHz to 1000 MHz)
* Internal input matching for high gain and optimum broadband

Applications

* and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test ci

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BLF10H6600P Power LDMOS transistor Ampleon

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