Datasheet4U.com

BLF10H6600P - Power LDMOS transistor

Ampleon

📥 Download Datasheet

BLF10H6600P Datasheet Preview — Preview of BLF10H6600P PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	BLF10H6600P
Manufacturer	Ampleon
File Size	503.58 KB
Description	Power LDMOS transistor
Datasheet	BLF10H6600P-Ampleon.pdf

BLF10H6600P Product details

Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

Features

Excellent ruggedness (VSWR  40 : 1 through all phases).
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Designed for broadband operation (400 MHz to 1000 MHz).
Internal input matching for high gain and optimum broadband operation.
Excellent reliability.
Easy power control.
Compl.

📁 BLF10H6600P Similar Datasheet

BLF1043 - UHF power LDMOS transistor (NXP)
BLF1046 - UHF power LDMOS transistor (NXP)
BLF1047 - UHF power LDMOS transistor (NXP)
BLF1048 - UHF power LDMOS transistor (NXP)
BLF10M6LS200 - Power LDMOS transistor (NXP)
BLF145 - HF power MOS transistor (NXP)
BLF147 - VHF power MOS transistor (NXP)
BLF174XR - Power LDMOS transistor (NXP)

Other Datasheets by Ampleon

BLF10H6600PS - Power LDMOS transistor
BLF10M6135 - Power LDMOS transistor
BLF10M6160 - Power LDMOS transistor
BLF10M6200 - Power LDMOS transistor
BLF10M6LS135 - Power LDMOS transistor
BLF10M6LS160 - Power LDMOS transistor

Published: Apr 27, 2018 |