BLF10M6LS200, BLF10M6200 Datasheet (NXP)

BLF10M6LS200, BLF10M6200, Power LDMOS transistor

200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier

BLF10M6LS200 Features

* Easy power control

* Integrated ESD protection

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (700 MHz to 1000 MHz)

* Internally matched for ease of use

* Compliant to Directive 2002/95/EC, regarding restric