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BLF175 HF/VHF power MOS transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specificat.
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range.

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Features

* High power gain
* Low intermodulation distortion
* Easy power control
* Good thermal stability
* Withstands full load mismatch

Applications

* in the HF/VHF frequency range. The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the 'General' section for further informat

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