S1G Datasheet | Specifications & PDF Download

GD9Fx1GxF3A GD9Fx1GxF3A DATASHEET 1G-bit 2K+64BPageSize DS-GD9Fx1GxF3A-Rev1.8 1 February 2023 GD9Fx1GxF3A Contents 1. FEATURES

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Fast Recovery Rectifier Production specification RS1A--RS1G Features  For surface mounted applications  Ideal for automated placement  Low forwar

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8GB (x72, QR) 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT72HTS1G72FZ – 8GB Features • 240-pin, DDR2 fully buffered DIMM (FBDIMM) • Fast d

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DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX

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8GB (x72, ECC, DR) 240-Pin DDR2 VLP RDIMM Features DDR2 SDRAM VLP RDIMM MT36HVZS1G2PZ – 8GB Features • 240-pin, registered very low-profile, dual in

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1Gb DDR2 SDRAM 1Gb DDR2 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5PS1G63KFR-xxC H5PS1G63KFR-xxI H5PS1G63KFR-xxJ H5PS1G63KFR-xxL * SK Hynix rese

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DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX

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DATA SHEET www.onsemi.com Fast Rectifiers ES1F-ES1J Features • For Surface Mount Applications • Glass Passivated Junction • Low Profile Package • Ea

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Super-Fast Rectifiers Production specification ES1E--ES1G Features  For surface mounted applications  Ideal for automated placement  Low forward

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TMPIM 50 A CIB/CI Module NXH50C120L2C2ESG, NXH50C120L2C2ES1G The NXH50C120L2C2ESG is a transfer−molded power module with low thermal resistance substr

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Features  Glass Passivated Die Construction  Super-Fast Recovery Time for High Efficiency  Surge Overload Rating to 30A Peak  Ideally Suited for A

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ALUMINUM  ELECTROLYTIC  CAPACITORS UUE Chip Type,  Vibration Resistance Chip type with load life of 2000 to 5000 hours at 125°C. Suited for automobil

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TMPIM 35 A CIB/CI Module Product Preview NXH35C120L2C2SG/S1G The NXH35C120L2C2SG is a transfer−molded power module containing a converter−inverter−br

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ES1AW~ES1JW Rev.C Feb.-2015 DATA SHEET / Descriptions ，：50V~600V，：1.0A， SOD-123FL 。 Surface Mount Superfast Recovery Rectifiers, Reverse Voltage：50

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AiT Components Inc. www.ait-components.com GS1A~GS1M RECTIFIER DIODES REVERSE VOLTAGE 50 TO 1000V FORWARD CURRENT 1.0A DESCRIPTION The GS1A~GS1M are

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® WON-TOP ELECTRONICS US1A – US1M 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Pb Features  Glass Passivated Die Construction  Ideally Su

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® WON-TOP ELECTRONICS ES1A – ES1J 1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Pb Features  Glass Passivated Die Construction  Ideally Su

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FEATURES  Glass Passivated Die Construction  Super-Fast Recovery Time For High Efficiency  Low Forward Voltage Drop and High Current Capability  I

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Si/SiC Hybrid Module – EliteSiC, 3 Channel Flying Capacitor Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2S1G, SNXH600B

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8GB (x72, ECC, DR) 244-Pin DDR3L ULP Mini-UDIMM Features 1.35V DDR3L SDRAM ULP Mini-UDIMM MT18KBZS1G72AKZ – 8GB Features • 244-pin, ultra low profile

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