NXH600B100H4Q2F2S1G
NXH600B100H4Q2F2S1G is Si/SiC Hybrid Module manufactured by onsemi.
Features
- 3- channel Boost in Q2 Package
- Extremely Efficient Trench with Field Stop Technology
- Low Switching Loss Reduces System Power Dissipation
- Module Design Offers High Power Density
- Low Inductive Layout
Typical Applications
- Solar Inverters
- Uninterruptible Power Supplies Systems
DATA SHEET .onsemi.
PIM56, 93x47 (SOLDER PIN) CASE 180BK
MARKING DIAGRAM NXH600B100H4Q2F2S1G ATYYWW NXH600B100H4Q2F2S1G = Specific Device Code G = Pb- Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
Figure 1. NXH600B100H4Q2F2S1G Schematic Diagram
© Semiconductor ponents Industries, LLC, 2022
March, 2023
- Rev. 1
Publication Order Number: NXH600B100H4Q2F2S1G/D
NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G- S
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
IGBT (T11, T12, T21, T22, T31, T32)
Collector- Emitter Voltage
VCES
Gate- Emitter Voltage
±20
Positive Transient Gate- Emitter Voltage (tpulse = 5 ms, D < 0.10)
Continuous Collector Current @ TC = 80°C
Pulsed Peak Collector Current @ TC = 80°C (TJ =...
