NXH600B100H4Q2F2S1G Description
Each channel contains two 1000 V, 200 A IGBTs, and two 1200 V, 60 A SiC diodes. The module contains an NTC thermistor.
NXH600B100H4Q2F2S1G Key Features
- 3-channel Boost in Q2 Package
- Extremely Efficient Trench with Field Stop Technology
- Low Switching Loss Reduces System Power Dissipation
- Module Design Offers High Power Density
- Low Inductive Layout