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Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package
NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG-R
The NXH600B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 200 A IGBTs, and two 1200 V, 60 A SiC diodes. The module contains an NTC thermistor.
Features
• Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layout • Low Package Height • Pb−Free, Halogen Free/BFR Free and RoHS Compliant
Typical Applications
• Solar Inverters • Uninterruptable Power Supplies Systems
DATA SHEET www.onsemi.
NXH600B100H4Q2F2PG Datasheet
