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NXH600B100H4Q2F2SG-R Datasheet Si/SiC Hybrid Module

Manufacturer: onsemi

Download the NXH600B100H4Q2F2SG-R datasheet PDF. This datasheet also includes the NXH600B100H4Q2F2PG variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (NXH600B100H4Q2F2PG-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG-R The NXH600B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module.

Each channel contains two 1000 V, 200 A IGBTs, and two 1200 V, 60 A SiC diodes.

The module contains an NTC thermistor.

Key Features

  • Extremely Efficient Trench with Field Stop Technology.
  • Low Switching Loss Reduces System Power Dissipation.
  • Module Design Offers High Power Density.
  • Low Inductive Layout.
  • Low Package Height.
  • Pb.
  • Free, Halogen Free/BFR Free and RoHS Compliant Typical.

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