S2d Datasheet | Specifications & PDF Download

MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 mW, 201 A NTMFS2D1N08X Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Mini

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PES2ABF-PES2JBF Surface Mount Superfast Recovery Rectifier Feature ¾ For surface mounted applications ¾ Low profile package ¾ Glass Passivated Chip J

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MOSFET – Power, Single, N-Channel 60 V, 2.0 mW, 185 A NTMYS2D2N06CL Features  Small Footprint (5x6 mm) for Compact Design  Low RDS(on) to Minimize

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ALUMINUM ELECTROLYTIC CAPACITORS LS Snap-in Terminal Type, 85°C Standard series Withstanding 3000 hours application of rated ripple current at 85°C. C

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DATA SHEET www.onsemi.com MOSFET – Power, N-Channel 80 V, 2.8 mW NVCR4LS2D8N08M7A Features • Typical RDS(on) = 2.2 mW at VGS = 10 V • Typical Qg(tot

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® WON-TOP ELECTRONICS S2AA – S2MA 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Pb Features  Glass Passivated Die Construction  Ideally Suite

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ALUMINUM ELECTROLYTIC CAPACITORS LS Snap-in Terminal Type, 85°C Standard series Withstanding 3000 hours application of rated ripple current at 85°C. C

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MOSFET – Power, Single N-Channel 60 V, 2.4 mW, 164 A NVMJS2D5N06CL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize

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ES2ABF THRU ES2JBF 2.0 AMP SURFACE MOUNT SUPER FAST RECTIFIERS FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strai

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ALUMINUM ELECTROLYTIC CAPACITORS LS Snap-in Terminal Type, 85°C Standard series Withstanding 3000 hours application of rated ripple current at 85°C. C

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MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 2.35 mW, 121 A NVMFWS2D3N04XM Features • Low RDS(on) to Minimize Conduction Losses • Low Capa

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MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.1 mW, 181 A NTMFS2D5N08X Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Mini

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Features • Glass Passivated Die Construction • Super-Fast Recovery Time For High Efficiency • Surge Overload Rating to 50A Peak • Ideally Suited for A

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ALUMINUM ELECTROLYTIC CAPACITORS LS Snap-in Terminal Type, 85°C Standard series Withstanding 3000 hours application of rated ripple current at 85°C. C

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ALUMINUM ELECTROLYTIC CAPACITORS LS Snap-in Terminal Type, 85°C Standard series Withstanding 3000 hours application of rated ripple current at 85°C. C

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MOSFET - Power, Single N-Channel, D2PAK7 60 V, 2.5 mW, 169 A NTBGS2D5N06C Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacita

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NTBS2D7N06M7 N‐Channel PowerTrench) MOSFET 60 V, 110 A, 2.7 mW Features • Typical RDS(on) = 2.2 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 80 n

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