S300 Datasheet | Specifications & PDF Download

ICS300/ICS301/ICS302 QTClock™ Quick Turn Clock Synthesizer Description The ICS300 and ICS301 QTClocks™ generate a high quality, high frequency clock o

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Medium Power AF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Low capacitance, low reverse current • For high efficiency DC/DC con

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Silicon N-Channel Power MOSFET ○R CS300N04 A0 General Description： CS300N04 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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GS3000 Specification Product specification MODEL: GS3000 NAME: One chip servo signal processor for 2-Digit & 4-Digit LED/LCD CD player VERSION: 0.14

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ATS300X Datasheet Version: 1.0 2018-08-15 Declaration Disclaimer Information given in this document is provided just as a reference or example for th

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HCS300 Code Hopping Encoder* FEATURES Security • • • • • • Programmable 28-bit serial number Programmable 64-bit encryption key Each transmission is u

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Why Stepping Motor encapsulated 2 phase NEMA 14 encapsulated 3 phase NEMA 14 NEMA 17 new release 2 phase NEMA 8 new release 2 phase NEMA 14 new releas

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AUTOMOTIVE GRADE PD - 97704A AUIRFS3004-7P D Features l l l l l l ● HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°

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Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0.5 A) • For low loss, fast-reco

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Medium Power AF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Low capacitance, low reverse current • For high efficiency DC/DC con

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CAS300M17BM2 5 1700 V, 8.0 mΩ, Silicon Carbide, Half-Bridge Module VDS IDS4 1700 V 3 300 A 2 D Technical Features • Industry Standard 62 mm

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PS3006   2F, RiteKom Bldg No.669, Sec. 4, Chung Hsing Rd.,  Chutung, Hsinchu, Taiwan 310, R.O.C.  Tel   886‐3‐5833899‐3001 or 1001 or 1005  Fax   886‐

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Technische Information / Technical Information IGBT-Module IGBT-modules FS300R12OE4 EconoPACK™+ Modul mit Trench/Feldstopp IGBT4 und Emitter Contro

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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Silicon N-Channel Power MOSFET ○R CS300N04 A8 General Description： CS300N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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ATS300X Datasheet Version: 1.0 2018-08-15 Declaration Disclaimer Information given in this document is provided just as a reference or example for th

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