S3610 Datasheet | Specifications & PDF Download

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  P

Rating: 1 ★ (4 votes)

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  P

Rating: 1 ★ (4 votes)

TPS3610U18, TPS3610T50 BATTERYĆBACKUP SUPERVISORS FOR RAM RETENTION features D Supply Current of 40 µA (Max) D Battery Supply Current of 100 nA (Max)

Rating: 1 ★ (3 votes)

TPS3610U18, TPS3610T50 BATTERYĆBACKUP SUPERVISORS FOR RAM RETENTION features D Supply Current of 40 µA (Max) D Battery Supply Current of 100 nA (Max)

Rating: 1 ★ (3 votes)

Rating: 1 ★ (3 votes)

FDMS3610S PowerTrench® Power Stage December 2011 FDMS3610S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „

Rating: 1 ★ (2 votes)

FDMS36101L_F085 N-Channel Power Trench® MOSFET FDMS36101L_F085 N-Channel Power Trench® MOSFET 100V, 38A, 26mΩ June 2013 Features „ Typ rDS(on) = 18

Rating: 1 ★ (2 votes)

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching and High efficiency  100

Rating: 1 ★ (2 votes)

Rating: 1 ★ (2 votes)

Rating: 1 ★ (2 votes)

VS3610AE-VB VS3610AE-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () Typ. 0.004 at VGS = 4.5 V 0.0

Rating: 1 ★ (2 votes)

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  P

Rating: 1 ★ (1 votes)