FDMS3610S - MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDMS3610S
Manufacturer	Fairchild Semiconductor
File Size	351.40 KB
Description	MOSFET
Datasheet	FDMS3610S-FairchildSemiconductor.pdf

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. Computing Communications General Purpose Point of Load Notebook VCORE

Q1: N-Channel.
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A.
Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel.
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant General.

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Published: Jan 11, 2017 |