FDMS3669S

Dual N-Channel MOSFET

ON Semiconductor

* Q1: N-Channel

* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A

* Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel

* Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A

* Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A

* Low inductance packaging shortens rise

FDMS3669S

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Dual n-channel mosfet.

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FDMS3669S Dual N-Channel MOSFET ON Semiconductor

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