FDMS3669S Dual N-Channel MOSFET

ON Semiconductor

Description

FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage General .
Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel. Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A. Max rDS(on) = 14.

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Datasheet Specifications

Part number: FDMS3669S
Manufacturer: ON Semiconductor ↗
File Size: 663.92 KB
Datasheet: FDMS3669S-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Q1: N-Channel
* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel
* Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
* Low inductance packaging shortens rise

Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE
* RoHS Compliant Pin 1 G1 D1 Pin D1 1 D1 D1 S2 5 Q2 4 D1 PHAS E(S1/ G2 D2) S2 S2 S2 Top Power 56 Bottom S2 6 S2 7 PHAS E 3 D1 2 D1 G2 8 Q1 1 G1 MOSFET Maxim

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FDMS3669S Dual N-Channel MOSFET ON Semiconductor

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