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FDMS3669S - Dual N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDMS3669S
Manufacturer	ON Semiconductor ↗
File Size	663.92 KB
Description	Dual N-Channel MOSFET
Datasheet	FDMS3669S-ONSemiconductor.pdf

FDMS3669S Product details

Description

Asymmetric Dual N-Channel MOSFET

Features

Q1: N-Channel.
Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel.
Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A.
Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing This device includes two specialized.

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Published: Dec 20, 2023 |