FDMS3606AS Datasheet, Mosfet, ON Semiconductor

FDMS3606AS Features

• Mosfet Q1: N-Channel
• Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
• Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
• Max rDS(on) = 1.9 mΩ at VGS = 10 V, I

PDF File Details

Part number:

FDMS3606AS

Manufacturer:

ON Semiconductor ↗

File Size:

926.29kb

Download:

📄 Datasheet

Description:

Asymmetric dual n-channel mosfet. This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enabl

FDMS3606AS Application

• Applications
• Computing
• Communications
• General Purpose Point of Load
• Notebook VCORE
• Sever G1 D1 D1

TAGS

FDMS3606AS

ON Semiconductor

📁 Related Datasheet

FDMS3606AS - MOSFET (Fairchild Semiconductor)
FDMS3606AS PowerTrench® Power Stage FDMS3606AS PowerTrench® Power Stage September 2011 30 V Asymmetric Dual N-Channel MOSFET Features General Des.

FDMS3606S - Asymmetric Dual N-Channel MOSFET (Fairchild Semiconductor)
FDMS3606S PowerTrench® Power Stage FDMS3606S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at.

FDMS3600AS - MOSFET (Fairchild Semiconductor)
FDMS3600AS PowerTrench® Power Stage FDMS3600AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 5.6 m.

FDMS3600S - MOSFET (Fairchild Semiconductor)
FDMS3600S PowerTrench® Power Stage FDMS3600S PowerTrench® Power Stage August 2011 25 V Asymmetric Dual N-Channel MOSFET Features General Descript.

FDMS3602AS - MOSFET (Fairchild Semiconductor)
FDMS3602AS PowerTrench® Power Stage FDMS3602AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 5.6 m.

FDMS3602S - MOSFET (Fairchild Semiconductor)
FDMS3602S PowerTrench® Power Stage FDMS3602S PowerTrench® Power Stage July 2016 25 V Asymmetric Dual N-Channel MOSFET Features General Descriptio.

FDMS3602S - 25V Asymmetric Dual N-Channel MOSFET (ON Semiconductor)
FDMS3602S PowerTrench® Power Stage FDMS3602S PowerTrench® Power Stage 25 V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Chan.

FDMS3604AS - MOSFET (Fairchild Semiconductor)
FDMS3604AS PowerTrench® Power Stage FDMS3604AS PowerTrench® Power Stage September 2011 30 V Asymmetric Dual N-Channel MOSFET Features General Des.

FDMS3604S - MOSFET (Fairchild Semiconductor)
FDMS3604S PowerTrench® Power Stage FDMS3604S PowerTrench® Power Stage January 2015 Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rD.

FDMS3604S - N-Channel MOSFET (ON Semiconductor)
FDMS3604S MOSFET – N-Channel, POWERTRENCH), Power Stage, Asymetric Dual General Description This device includes two specialized N−Channel MOSFETs in.