FDMS3606AS - Asymmetric Dual N-Channel MOSFET

ON Semiconductor

FDMS3606AS Datasheet Preview — Preview of FDMS3606AS PDF

Datasheet Details

Part number	FDMS3606AS
Manufacturer	ON Semiconductor ↗
File Size	926.29 KB
Description	Asymmetric Dual N-Channel MOSFET
Datasheet	FDMS3606AS-ONSemiconductor.pdf

FDMS3606AS Product details

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. Computing Communications General Purpose Point of Load Notebook VCORE Sever G1 D1 D1 D1 D1 PHASE (S1/D2) G2S2S2 S2 Top Power 56 B

Features

Q1: N-Channel.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A.
Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant General Descr.

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Published: Dec 12, 2021 |