Part number:
FDMS3606AS
Manufacturer:
File Size:
926.29 KB
Description:
Asymmetric dual n-channel mosfet.
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficienc
FDMS3606AS Features
* Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A
* Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A
* Low inductance packaging shortens rise/
FDMS3606AS-ONSemiconductor.pdf
Datasheet Details
FDMS3606AS
926.29 KB
Asymmetric dual n-channel mosfet.
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