FDMS3606AS Asymmetric Dual N-Channel MOSFET

ON Semiconductor

Description

FDMS3606AS PowerTrench® Power Stage FDMS3606AS PowerTrench® Power Stage 30 V Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

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Datasheet Specifications

Part number: FDMS3606AS
Manufacturer: ON Semiconductor ↗
File Size: 926.29 KB
Datasheet: FDMS3606AS-ONSemiconductor.pdf
Description: Asymmetric Dual N-Channel MOSFET

Features

* Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A
* Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A
* Low inductance packaging shortens rise/

Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE
* Sever G1 D1 D1 D1 D1 PHASE (S1/D2) G2S2S2 S2 Top Power 56 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain

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FDMS3606AS Asymmetric Dual N-Channel MOSFET ON Semiconductor

ON Semiconductor FDMS3606AS-like datasheet