FDMS3604AS
Fairchild Semiconductor
529.35kb
Mosfet. Q1: N-Channel * Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A * Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel * Max rDS(
TAGS
📁 Related Datasheet
FDMS3604S - MOSFET
(Fairchild Semiconductor)
FDMS3604S PowerTrench® Power Stage
FDMS3604S
PowerTrench® Power Stage
January 2015
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rD.
FDMS3604S - N-Channel MOSFET
(ON Semiconductor)
FDMS3604S
MOSFET – N-Channel, POWERTRENCH), Power Stage, Asymetric Dual
General Description This device includes two specialized N−Channel MOSFETs in.
FDMS3600AS - MOSFET
(Fairchild Semiconductor)
FDMS3600AS PowerTrench® Power Stage
FDMS3600AS
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 5.6 m.
FDMS3600S - MOSFET
(Fairchild Semiconductor)
FDMS3600S PowerTrench® Power Stage
FDMS3600S
PowerTrench® Power Stage
August 2011
25 V Asymmetric Dual N-Channel MOSFET
Features
General Descript.
FDMS3602AS - MOSFET
(Fairchild Semiconductor)
FDMS3602AS PowerTrench® Power Stage
FDMS3602AS
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 5.6 m.
FDMS3602S - MOSFET
(Fairchild Semiconductor)
FDMS3602S PowerTrench® Power Stage
FDMS3602S
PowerTrench® Power Stage
July 2016
25 V Asymmetric Dual N-Channel MOSFET
Features
General Descriptio.
FDMS3602S - 25V Asymmetric Dual N-Channel MOSFET
(ON Semiconductor)
FDMS3602S PowerTrench® Power Stage
FDMS3602S
PowerTrench® Power Stage
25 V Asymmetric Dual N-Channel MOSFET General Description
Features
Q1: N-Chan.
FDMS3606AS - MOSFET
(Fairchild Semiconductor)
FDMS3606AS PowerTrench® Power Stage
FDMS3606AS
PowerTrench® Power Stage
September 2011
30 V Asymmetric Dual N-Channel MOSFET
Features
General Des.
FDMS3606AS - Asymmetric Dual N-Channel MOSFET
(ON Semiconductor)
FDMS3606AS PowerTrench® Power Stage
FDMS3606AS
PowerTrench® Power Stage
30 V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = .
FDMS3606S - Asymmetric Dual N-Channel MOSFET
(Fairchild Semiconductor)
FDMS3606S PowerTrench® Power Stage
FDMS3606S
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 8 mΩ at.