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FDMS3664S - Dual N-Channel MOSFET

FDMS3664S Description

MOSFET * Dual, N-Channel, Asymmetric, POWERTRENCH), Power Stage FDMS3664S General .
This device includes two specialized N. Channel MOSFETs in a dual PQFN package.

FDMS3664S Features

* Q1: N
* Channel
* Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A
* Max RDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N
* Channel
* Max RDS(on) = 2.6 mW at VGS = 10 V, ID = 25 A
* Max RDS(on) = 3.2 mW at VGS = 4.5 V, ID = 22 A
* Low Inductance Packagin

FDMS3664S Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE DATA SHEET www. onsemi. com Pin 1 G1 D1D1D1 D1 PHASE (S1/D2) G2 S2 S2S2 PQFN8 5 y 6, 1.27P (Power 56) CASE 483AJ MARKING DIAGRAM &Z&3&K 22CF 10OD &Z &3 &K 22CF10OD = Assembly Plant Co

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Dual N-Channel MOSFET ON Semiconductor
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