FDMS3664S

Dual N-Channel MOSFET

ON Semiconductor

FDMS3664S Features

* Q1: N

* Channel

* Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A

* Max RDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N

* Channel

* Max RDS(on) = 2.6 mW at VGS = 10 V, ID = 25 A

* Max RDS(on) = 3.2 mW at VGS = 4.5 V, ID = 22 A

* Low Inductance Packagin

FDMS3664S General Description

This device includes two specialized N

*Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power .

FDMS3664S Datasheet (974.93 KB)