FDMS3662 Datasheet, Mosfet, Fairchild Semiconductor

FDMS3662 Features

• Mosfet General Description
• Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
• Advanced Package and Silicon combination for low rDS(on)
• MSL1 robust package design Thi

PDF File Details

Part number:

FDMS3662

Manufacturer:

Fairchild Semiconductor

File Size:

308.77kb

Download:

📄 Datasheet

Description:

Mosfet.

Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A

Advanced Package and Silicon combination for low rDS(on)

TAGS

FDMS3662

Fairchild Semiconductor

📁 Related Datasheet

FDMS3660AS - MOSFET (Fairchild Semiconductor)
FDMS3660AS PowerTrench® Power Stage FDMS3660AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ .

FDMS3660S - Asymmetric Dual N-Channel MOSFET (Fairchild Semiconductor)
FDMS3660S PowerTrench® Power Stage FDMS3660S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at.

FDMS3660S - Asymmetric Dual N-Channel MOSFET (ON Semiconductor)
FDMS3660S PowerTrench) Power Stage Asymmetric Dual N−Channel MOSFET Description This device includes two specialized N−Channel MOSFETs in a dual PQFN .

FDMS3662 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel POWERTRENCH) 100 V, 39 A, 14.8 mW FDMS3662 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH proce.

FDMS3664S - MOSFET (Fairchild Semiconductor)
FDMS3664S PowerTrench® Power Stage FDMS3664S PowerTrench® Power Stage January 2015 Asymmetric Dual N-Channel MOSFET Features General Description .

FDMS3664S - Dual N-Channel MOSFET (ON Semiconductor)
MOSFET – Dual, N-Channel, Asymmetric, POWERTRENCH), Power Stage FDMS3664S General Description This device includes two specialized N−Channel MOSFETs i.

FDMS3668S - MOSFET (Fairchild Semiconductor)
FDMS3668S PowerTrench® Power Stage FDMS3668S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at.

FDMS3669S - MOSFET (Fairchild Semiconductor)
FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 10 mΩ a.

FDMS3669S - Dual N-Channel MOSFET (ON Semiconductor)
FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage General Description Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel .

FDMS3600AS - MOSFET (Fairchild Semiconductor)
FDMS3600AS PowerTrench® Power Stage FDMS3600AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 5.6 m.