FDMS007N08LC - N-Channel MOSFET
This N *Channel MV MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology.
This process has been optimized to minimize on *state resistance and yet maintain superior switching performance with best in class soft body diode.
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FDMS007N08LC Features
* Shielded Gate MOSFET Technology
* Max rDS(on) = 6.7 mW at VGS = 10 V, ID = 21 A
* Max rDS(on) = 9.9 mW at VGS = 4.5 V, ID = 17 A
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL
