FDMS007N08LC Datasheet - ON Semiconductor

FDMS007N08LC N-Channel MOSFET

This N *Channel MV MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on *state resistance and yet maintain superior switching performance with best in class soft body diode. F.

FDMS007N08LC Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 6.7 mW at VGS = 10 V, ID = 21 A

* Max rDS(on) = 9.9 mW at VGS = 4.5 V, ID = 17 A

* 50% Lower Qrr than Other MOSFET Suppliers

* Lowers Switching Noise/EMI

* MSL1 Robust Package Design

* 100% UIL

FDMS007N08LC-ONSemiconductor.pdf