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FDMS0312S N-Channel MOSFET

FDMS0312S Description

SyncFETt * N-Channel, POWERTRENCH) 30 V, 42 A, 4.9 mW FDMS0312S General .
The FDMS0312S has been designed to minimize losses in power conversion application.

FDMS0312S Features

* Max rDS(on) = 4.9 mW at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.8 mW at VGS = 4.5 V, ID = 14 A
* Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
* SyncFET Schottky Body Diode
* MSL1 Robust Package Design
* 100% UIL Tested

FDMS0312S Applications

* Synchronous Rectifier for DC/DC Converters
* Notebook Vcore/GPU Low Side Switch
* Networking Point of Load Low Side Switch
* Telecom Secondary Side Rectification MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain

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N-Channel MOSFET ON Semiconductor
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