FDMS0312S - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDMS0312S
Manufacturer	ON Semiconductor
File Size	438.37 KB
Description	N-Channel MOSFET
Datasheet	FDMS0312S-ONSemiconductor.pdf

FDMS0312S Product details

Description

The FDMS0312S has been designed to minimize losses in power conversion application.Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

Features

Max rDS(on) = 4.9 mW at VGS = 10 V, ID = 18 A.
Max rDS(on) = 5.8 mW at VGS = 4.5 V, ID = 14 A.
Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency.
SyncFET Schottky Body Diode.
MSL1 Robust Package Design.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 20, 2023 |