FDMS1D2N03DSD Datasheet - ON Semiconductor

Dual N-Channel MOSFETs

FDMS1D2N03DSD Features

* Q1: N-Channel

* Max RDS(on) = 3.25 mW at VGS = 10 V, ID = 19 A

* Max RDS(on) = 4 mW at VGS = 4.5 V, ID = 17 A Q2: N-Channel

* Max RDS(on) = 0.97 mW at VGS = 10 V, ID = 37 A

* Max RDS(on) = 1.25 mW at VGS = 4.5 V, ID = 34 A

* Low Inductance Packaging Shortens R

FDMS1D2N03DSD General Description

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency. F.

FDMS1D2N03DSD Datasheet (505.46 KB)