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FDMS037N08B N-Channel MOSFET

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Description

MOSFET * N-Channel POWERTRENCH) 75 V, 100 A, 3.7 mW FDMS037N08B .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on. state resistan.

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Features

* RDS(on) = 3.01 mW (Typ. ) @ VGS = 10 V, ID = 50 A
* Low FOM RDS(on)
* QG
* Low Reverse Recovery Charge, Qrr = 80 nC
* Soft Reverse Recovery Body Diode
* Enables Highly Efficiency in Synchronous Rectification
* Fast Switching Speed
* 100% UIL

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection circuit
* DC Motor Drives and Uninterruptible Power Supplies MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted. ) Symbol Parameter Value Unit VDSS Drain to Source Voltage 75 V VGSS

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