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FDMS0306AS - N-Channel MOSFET

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Description

Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency SyncFET Schottky Body Diode MSL1 Robust Package Design 100% UIL Teste

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Datasheet Details

Part number FDMS0306AS
Manufacturer Fairchild Semiconductor
File Size 317.27 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS0306AS Datasheet
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FDMS0306AS N-Channel PowerTrench® SyncFETTM March 2015 FDMS0306AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.4 mΩ Features General Description „ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A „ Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency „ SyncFET Schottky Body Diode „ MSL1 Robust Package Design „ 100% UIL Tested „ RoHS Compliant The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
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