FDMS0306AS Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A - Max r DS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A - Advanced Package and Silicon bination for Low r DS(on) and High Efficiency - Sync FET Schottky Body Diode - MSL1 Robust Package Design - 100% UIL Tested - Ro HS pliant The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode. Applications - Synchronous Rectifier for DC/DC Converters - Notebook Vcore/GPU Low Side Switch - Networking Point of Load Low Side Switch - Tele Secondary Side Rectification Top Bottom Pin 1 D5 D6 Power 56 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA =...