FEATURES
GENERAL DESCRIPTION
Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 23 A Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency SyncFET Schottky Body Diode MSL1 Robust Package Design Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. APPLICATIONS
100% UIL Tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU Low Side Switch Networking Point of Load Low Side Switch Top Bottom Pin 1 S D5 S SG D 6 D7 DDDD Power 56 D8 4G 3S 2S 1S MOSFET MAXIMUM RATINGS
TA
Fairchild Semiconductor
