FDMS0302S Description
Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 23 A Advanced Package and Silicon bination for Low rDS(on) and High Efficiency SyncFET Schottky Body Diode MSL1 Robust Package Design The FDMS0302S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while...
FDMS0302S Key Features
- Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A
- Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 23 A
- Advanced Package and Silicon bination for Low rDS(on)
- SyncFET Schottky Body Diode
- MSL1 Robust Package Design