Datasheet4U Logo Datasheet4U.com

FDMS0309AS - MOSFET

General Description

Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A Advanced package and silicon combination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 Robust Package Design 100% UIL tes

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS030N06B N-Channel MOSFET ON Semiconductor
FDMS0310AS N-Channel MOSFET ON Semiconductor
FDMS0312AS N-Channel MOSFET ON Semiconductor
FDMS0312S N-Channel MOSFET ON Semiconductor
FDMS037N08B N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDMS0300S MOSFET
FDMS0302S MOSFET
FDMS0306AS N-Channel MOSFET
FDMS0308AS MOSFET
FDMS0308CS N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS0309AS N-Channel PowerTrench® SyncFETTM FDMS0309AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 3.5 mΩ January 2015 Features General Description „ Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A „ Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A „ Advanced package and silicon combination for low rDS(on) and high efficiency „ SyncFETTM Schottky Body Diode „ MSL1 Robust Package Design „ 100% UIL tested „ RoHS Compliant The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.