FDMS039N08B Datasheet - ON Semiconductor

FDMS039N08B, N-Channel MOSFET

MOSFET * N-Channel, POWERTRENCH) 80 V, 100 A, 3.9 mW FDMS039N08B General .
This N. Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on. state resistanc.

Features

* Max RDS(on) = 3.2 mW (Typ. ) @ VGS = 10 V, ID = 50 A
* Low FOM RDS(on)
* QG
* Low Reverse Recovery Charge, Qrr = 80 nC
* Soft Reverse Recovery Body Diode
* Enables Highly Efficiency in Synchronous Rectification
* Fast Switching Speed
* 100

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter FDMS039N08B Unit VDSS VGSS ID IDM Drain to Source Voltag

FDMS039N08B-ONSemiconductor.pdf