Datasheet Details
- Part number
- FDMS039N08B
- Manufacturer
- ON Semiconductor ↗
- File Size
- 650.14 KB
- Datasheet
- FDMS039N08B-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDMS039N08B Description
MOSFET * N-Channel, POWERTRENCH) 80 V, 100 A, 3.9 mW FDMS039N08B General .
This N.
Channel MOSFET is produced using onsemi’s advance
POWERTRENCH process that has been tailored to minimize the on.
state resistanc.
FDMS039N08B Features
* Max RDS(on) = 3.2 mW (Typ. ) @ VGS = 10 V, ID = 50 A
* Low FOM RDS(on)
* QG
* Low Reverse Recovery Charge, Qrr = 80 nC
* Soft Reverse Recovery Body Diode
* Enables Highly Efficiency in Synchronous Rectification
* Fast Switching Speed
* 100
FDMS039N08B Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parameter
FDMS039N08B Unit
VDSS VGSS
ID
IDM
Drain to Source Voltag
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