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FDMS2572 - N-Channel MOSFET

General Description

efficiency in power conversion applications.

Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Key Features

  • Max rDS(on) = 47 mW at VGS = 10 V, ID = 4.5 A.
  • Max rDS(on) = 53 mW at VGS = 6 V, ID = 4.5 A.
  • Low Miller Charge.
  • Optimized Efficiency at High Frequencies.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FDMS2572
Manufacturer onsemi
File Size 303.30 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS2572 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, UltraFET Trench 150 V, 27 A, 47 mW FDMS2572 General Description UItraFETt devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features • Max rDS(on) = 47 mW at VGS = 10 V, ID = 4.5 A • Max rDS(on) = 53 mW at VGS = 6 V, ID = 4.