The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOSFET – N-Channel, UltraFET Trench
150 V, 27 A, 47 mW
FDMS2572
General Description UItraFETt devices combine characteristics that enable benchmark
efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Features
• Max rDS(on) = 47 mW at VGS = 10 V, ID = 4.5 A • Max rDS(on) = 53 mW at VGS = 6 V, ID = 4.