Datasheet Details
| Part number | FDMS2572 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 484.17 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Datasheet | FDMS2572_FairchildSemiconductor.pdf |
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Overview: FDMS2572 N-Channel UltraFET Trench® MOSFET December 2012 FDMS2572 N-Channel UltraFET Trench® MOSFET 150V, 27A,.
| Part number | FDMS2572 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 484.17 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Datasheet | FDMS2572_FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A Max rDS(on) = 53mΩ at VGS = 6V, ID = 4.5A Low Miller Charge Optimized efficiency at high frequencies UIS Capability (Single pulse and Repetitive pulse) RoHS Compliant UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Application Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Pin 1 S S SG DD DD Power 56 (Bottom view) D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 150 ±20 27 27 4.5 30 150 78 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 1.6 50 °C/W Device Marking FDMS2572 Device FDMS2572 Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMS2572 Rev.C4 1 www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficie
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