FDMS2572 Datasheet | Fairchild Semiconductor

FDMS2572 N-Channel UltraFET Trench® MOSFET December 2012 FDMS2572 N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ Features General Description - Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A - Max rDS(on) = 53mΩ at VGS = 6V, ID = 4.5A - Low Miller Charge - Optimized efficiency at high frequencies - UIS Capability (Single pulse and Repetitive pulse) - RoHS pliant UItraFET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application - Distributed Power Architectures and VRMs - Primary Switch for 24V and...