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FDMS003N08C - N-Channel MOSFET

General Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56 A.
  • Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A.
  • 50% lower Qrr than other MOSFET suppliers.
  • Lowers switching noise/EMI.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

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FDMS003N08C N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDMS003N08C N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 147 A, 3.1 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56 A „ Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A „ 50% lower Qrr than other MOSFET suppliers „ Lowers switching noise/EMI „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.