FDMS3669S MOSFET

Fairchild Semiconductor

Description

FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

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Datasheet Specifications

Part number: FDMS3669S
Manufacturer: Fairchild Semiconductor
File Size: 525.36 KB
Datasheet: FDMS3669S-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Q1: N-Channel
* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel
* Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
* Low inductance packaging shortens rise

Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin 1 P

FDMS3669S Distributors

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FDMS3669S MOSFET Fairchild Semiconductor

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