FDMS3669S Datasheet - Fairchild Semiconductor

FDMS3669S MOSFET

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficie.

FDMS3669S Features

* Q1: N-Channel

* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A

* Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel

* Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A

* Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A

* Low inductance packaging shortens rise

FDMS3669S-FairchildSemiconductor.pdf