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FDMS3600AS MOSFET

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Description

FDMS3600AS PowerTrench® Power Stage FDMS3600AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

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Features

* Q1: N-Channel
* Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
* Max rDS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel
* Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A
* Low inductance packaging shortens ri

Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin 1 G

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