FDMS3572

N-Channel MOSFET

ON Semiconductor

* Max RDS(on) = 16.5 mW at VGS = 10 V, ID = 8.8 A

* Max RDS(on) = 24 mW at VGS = 6 V, ID = 8.4 A

* Typ Qg = 28 nC at VGS = 10 V

* Low Miller Charge

* Optimized Efficiency at High Frequencies

* Pb

* Free, Halide Free and RoHS Compliant Application

FDMS3572

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N-channel mosfet.

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FDMS3572 N-Channel MOSFET ON Semiconductor

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