FDMS3572 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, UltraFET Trench 80 V, 22 A, 16.5 mW FDMS3572 General .
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.

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Datasheet Specifications

Part number: FDMS3572
Manufacturer: ON Semiconductor ↗
File Size: 292.45 KB
Datasheet: FDMS3572-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 16.5 mW at VGS = 10 V, ID = 8.8 A
* Max RDS(on) = 24 mW at VGS = 6 V, ID = 8.4 A
* Typ Qg = 28 nC at VGS = 10 V
* Low Miller Charge
* Optimized Efficiency at High Frequencies
* Pb

FDMS3572 Distributors

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FDMS3572 N-Channel MOSFET ON Semiconductor

ON Semiconductor FDMS3572-like datasheet