FDMS3662 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel POWERTRENCH) 100 V, 39 A, 14.8 mW FDMS3662 .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on. sta.

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Datasheet Specifications

Part number: FDMS3662
Manufacturer: ON Semiconductor ↗
File Size: 468.20 KB
Datasheet: FDMS3662-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 14.8 mW at VGS = 10 V, ID = 8.9 A
* Advanced Package and Silicon combination for low RDS(on)
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL Tested
* These Device is Pb
* Free and RoHS Compliant Typical Applic

Applications

* DC
* DC Conversion ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* Continuous TC = 25°C
* Continuous TA = 25°C (Note 1a)
* Pulsed 100

FDMS3662 Distributors

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FDMS3662 N-Channel MOSFET ON Semiconductor

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