FDMS3662

N-Channel MOSFET

ON Semiconductor

* Max RDS(on) = 14.8 mW at VGS = 10 V, ID = 8.9 A

* Advanced Package and Silicon combination for low RDS(on)

* Lowers Switching Noise/EMI

* MSL1 Robust Package Design

* 100% UIL Tested

* These Device is Pb

* Free and RoHS Compliant Typical Applic

FDMS3662

468.20 KB

N-channel mosfet.

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FDMS3662 N-Channel MOSFET ON Semiconductor

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