FDMS3602S 25V Asymmetric Dual N-Channel MOSFET

ON Semiconductor

Description

FDMS3602S PowerTrench® Power Stage FDMS3602S PowerTrench® Power Stage 25 V Asymmetric Dual N-Channel MOSFET General .
Features Q1: N-Channel. Max rDS(on) = 5. Max rDS(on) = 8.

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Datasheet Specifications

Part number: FDMS3602S
Manufacturer: ON Semiconductor ↗
File Size: 1.96 MB
Datasheet: FDMS3602S-ONSemiconductor.pdf
Description: 25V Asymmetric Dual N-Channel MOSFET

Features

* Q1: N-Channel
* Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
* Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel
* Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A
* Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A
* Low inductance packaging shortens ri

Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE
* Server Pin 1 Pin 1 G1 D1 D1 D1 D1 S2 PHASE (S1/D2) G2 S2 S2 S2 Top Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted. S2 S2 G2 Symbol VDS VGS ID EAS PD TJ, TSTG

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FDMS3602S 25V Asymmetric Dual N-Channel MOSFET ON Semiconductor

ON Semiconductor FDMS3602S-like datasheet