FDMS3602S Datasheet - ON Semiconductor

FDMS3602S 25V Asymmetric Dual N-Channel MOSFET

FDMS3602S Features

* Q1: N-Channel

* Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A

* Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel

* Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A

* Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A

* Low inductance packaging shortens ri

Datasheet Details

FDMS3602S

1.96 MB

25v asymmetric dual n-channel mosfet.

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