FDMS3672 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, UltraFET Trench 100 V, 22 A, 23 mW FDMS3672 General .
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.

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Datasheet Specifications

Part number: FDMS3672
Manufacturer: ON Semiconductor ↗
File Size: 278.95 KB
Datasheet: FDMS3672-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A
* Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A
* Typ Qg = 31 nC at VGS = 10 V
* Low Miller Charge
* Optimized Efficiency at High Frequencies
* This Device is Pb
* Free, Halide Free and RoHS Complian

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FDMS3672 N-Channel MOSFET ON Semiconductor

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