FDMS3672

N-Channel MOSFET

ON Semiconductor

* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A

* Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A

* Typ Qg = 31 nC at VGS = 10 V

* Low Miller Charge

* Optimized Efficiency at High Frequencies

* This Device is Pb

* Free, Halide Free and RoHS Complian

FDMS3672

278.95 KB

N-channel mosfet.

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FDMS3672 N-Channel MOSFET ON Semiconductor

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