FDMS3660S

Asymmetric Dual N-Channel MOSFET

ON Semiconductor

FDMS3660S Features

* Q1: N

* Channel

* Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A

* Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N

* Channel

* Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A

* Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A

* Low Inductance Packagin

FDMS3660S General Description

This device includes two specialized N

*Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power e.

FDMS3660S Datasheet (702.36 KB)