Datasheet4U Logo Datasheet4U.com

FDMS3660S Datasheet - ON Semiconductor

FDMS3660S-ONSemiconductor.pdf

Preview of FDMS3660S PDF
FDMS3660S Datasheet Preview Page 2 FDMS3660S Datasheet Preview Page 3

Datasheet Details

Part number:

FDMS3660S

Manufacturer:

ON Semiconductor ↗

File Size:

702.36 KB

Description:

Asymmetric dual n-channel mosfet.

FDMS3660S, Asymmetric Dual N-Channel MOSFET

This device includes two specialized N *Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power e

FDMS3660S Features

* Q1: N

* Channel

* Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A

* Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N

* Channel

* Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A

* Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A

* Low Inductance Packagin

📁 Related Datasheet

📌 All Tags

ON Semiconductor FDMS3660S-like datasheet