FDMS3660S Asymmetric Dual N-Channel MOSFET

ON Semiconductor

Description

FDMS3660S PowerTrench) Power Stage Asymmetric Dual N *Channel MOSFET .
This device includes two specialized N. Channel MOSFETs in a dual PQFN package.

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Datasheet Specifications

Part number: FDMS3660S
Manufacturer: ON Semiconductor ↗
File Size: 702.36 KB
Datasheet: FDMS3660S-ONSemiconductor.pdf
Description: Asymmetric Dual N-Channel MOSFET

Features

* Q1: N
* Channel
* Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N
* Channel
* Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A
* Low Inductance Packagin

Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE www. onsemi. com Pin 1 G1 D1 D1 D1 D1 PHASE (S1/D2) G2 S2 S2 S2 PQFN8 POWER 56 CASE 483AJ S2 5 S2 6 S2 7 G2 8 Q2 4 D1 PHASE 3 D1 2 D1 Q1 1 G1 ORDERING INFORMATION See detailed or

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FDMS3660S Asymmetric Dual N-Channel MOSFET ON Semiconductor

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