FDMS3660S Datasheet, Mosfet, ON Semiconductor

FDMS3660S Features

• Mosfet Q1: N
• Channel
• Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A
• Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N
• Channel
• Max rDS(on) = 1.8 mW

PDF File Details

Part number:

FDMS3660S

Manufacturer:

ON Semiconductor ↗

File Size:

702.36kb

Download:

📄 Datasheet

Description:

Asymmetric dual n-channel mosfet. This device includes two specialized N

Channel MOSFETs in a dual PQFN package. The switch node has been internally connected

FDMS3660S Application

• Applications
• Computing
• Communications
• General Purpose Point of Load
• Notebook VCORE www.onsemi.com Pin 1 G

TAGS

FDMS3660S

ON Semiconductor

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