FDMS3660AS Datasheet - Fairchild Semiconductor

FDMS3660AS MOSFET

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficie.

FDMS3660AS Features

* Q1: N-Channel

* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A

* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel

* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A

* Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A

* Low inductance packaging shortens rise/

FDMS3660AS Datasheet (389.11 KB)