Datasheet4U Logo Datasheet4U.com

FDMS3660AS - MOSFET

FDMS3660AS Description

FDMS3660AS PowerTrench® Power Stage FDMS3660AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

FDMS3660AS Features

* Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
* Low inductance packaging shortens rise/

FDMS3660AS Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin 1 Pin

📥 Download Datasheet

Preview of FDMS3660AS PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDMS3602S - 25V Asymmetric Dual N-Channel MOSFET (ON Semiconductor)
  • FDMS3604S - N-Channel MOSFET (ON Semiconductor)
  • FDMS3606AS - Asymmetric Dual N-Channel MOSFET (ON Semiconductor)
  • FDMS3672 - N-Channel MOSFET (ON Semiconductor)
  • FDMS3500 - N-Channel MOSFET (ON Semiconductor)
  • FDMS3572 - N-Channel MOSFET (ON Semiconductor)
  • FDMS003N08C - N-Channel MOSFET (ON Semiconductor)
  • FDMS007N08LC - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDMS3660AS-like datasheet

FDMS3660AS Stock/Price